دیتاشیت FDL100N50F
مشخصات دیتاشیت
| نام دیتاشیت |
FDL100N50F
|
| حجم فایل |
716.642
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDL100N50F
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
2500W
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Total Gate Charge (Qg@Vgs):
238nC@10V
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Drain Source Voltage (Vdss):
500V
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Input Capacitance (Ciss@Vds):
12000pF@25V
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Continuous Drain Current (Id):
100A
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Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
55mΩ@50A,10V
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Package:
TO-264-3
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Manufacturer:
onsemi
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Series:
UniFET™
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
500V
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Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
55mOhm @ 50A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
238nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
12000pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
2500W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-264-3
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Package / Case:
TO-264-3, TO-264AA
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Base Part Number:
FDL100
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detail:
N-Channel 500V 100A (Tc) 2500W (Tc) Through Hole TO-264-3
